Ti/Ni/Au metalization on CVD diamond Diamond metalization
At DIASEMI, we develop advanced Ti/Ni/Au multilayer metallization technology for integrating diamond with next-generation semiconductor and high-power electronic platforms. Using vacuum magnetron sputtering, DIASEMI sequentially deposits Ti, Ni, and Au films onto both monocrystalline and polycrystalline diamond substrates, creating a robust and functional metal–diamond interface.
The Ti layer provides strong interfacial adhesion to diamond, while the Ni layer serves as a diffusion barrier and stabilizing interlayer. The Au top layer provides high electrical conductivity, chemical stability, and oxidation resistance, enabling reliable electrical and packaging interfaces.
DIASEMI applies this metallization platform to diamond semiconductor devices, RF and high-frequency electrodes, MEMS structures, precision chip packaging, and advanced diamond heat spreaders and heat-sink wafers. By engineering the metal/diamond interface, DIASEMI aims to deliver high adhesion, low-resistance electrical performance, thermal compatibility, and long-term reliability for demanding high-power and high-frequency applications.
