DIAMOND LAYER
DESCRIPTION: Diamond CVD On Silicon Wafer
GROWTH METHOD: MPCVD
THICKNESS: 15±5µm
GROWING ZONE: 50.8±0.2mm
SURFACE ROUGHNESS: 0.7 µm
GRAIN SIZE: ≤20 µm
FWHM (D111): 0.355 nm
THERMAL CONDUCTIVITY: 1800-2000W/m.K
WARPAGE: <30 µm
TTV: <10 µm
CTE: 1.3
MW POWER: 6 KW
SI WAFER
MODEL DOPING AGENT: P/B
PULLING METHOD: CZ
CRYSTAL ORIENTATION: 100
RESITIVITY RANGE: 20-30 ohm-cm
DIAMETER: 50.8±0.2mm
DEVIATION DEGREE OF CRYSTAL ORIENTAION: <1°
THICKENSS AND TOLERANCE: 30000±20 µm
TTV: ≤10 µm
WARPAGE: ≤10 µm
SURFACE FINISH: Single sided polishing
