Ultra High Thermal Conductivity Diamond Wafer

High mechanical strength Excellent electrical insulation

Low dielectric constant Increased power density

Technical Specifications

Preparation Method MPCVD

Dimension 1-4 inch customizable

Thickness 0.3-1.0mm

Thickness Tolerance ±0.05mm

Surface Roughness 1-30nm

Thermal Conductivity 1200-2000W/mk @300K

Thermal Expansion Coefficient 1X10^-6@300K

Specific Heat Capacity 0.502J/gK@300K

Density 3.52(X10³Kg*m^-3)

Vicker's Hardness 65-100GPa

Young's Modulus 1050GPa